silicon planar epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5293 issue 2 page 1 of 3 2N3114CSM ? high voltage ? hermetic ceramic surface mount package ? designed for low noise general purpose amplifiers, driver stages and signal processing applications ? screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage 150v v ceo collector ? emitter voltage 150v v ebo emitter ? base voltage 5v i c continuous collector current 150ma p d total power dissipation at t a = 25c 350mw derate above 25c 2mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 500 c/w
silicon planar epitaxial npn transistor 2N3114CSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5293 issue 2 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units i ceo collector-cut-off current v ce = 150v i b = 0 100 a v cb = 150v i e = 0 10 a v cb = 100v i e = 0 10 na i cbo collector-cut-off current t a = 150c 10 a v eb = 5v i c = 0 1.0 a i ebo emitter-cut-off current v eb = 4v i c = 0 100 na i c = 0.1ma v ce = 10v 15 35 i c = 30 m a v ce = 10v 30 60 120 h fe (1) forward-current transfer ratio t a = 150c 12 24 v ce(sat) (1) collector-emitter saturation voltage i c = 50ma i b = 5ma 1.0 v be(sat) (1) base-emitter saturation voltage i c = 50ma i b = 5ma 0.9 v dynamic characteristics i c = 30ma v ce = 10v | h fe | small signal forward-current transfer ratio f = 20mhz 2 v cb = 20v i e = 0 c obo output capacitance f = 1.0mhz 9 pf v eb = 0.5v i c = 0 c ibo input capacitance f = 1.0mhz 80 pf notes notes notes notes (1) pulse width 300us, 2%
silicon planar epitaxial npn transistor 2N3114CSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5293 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) lcc1 underside view pad 1 - base pad 2 - emitter pad 3 - collector 2 1 0.51 0.10 (0.02 0.004) 0.31 (0.012) 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 2 . 54 0 . 13 ( 0 . 10 0 . 005 ) 0 . 76 0 . 15 ( 0 . 03 0 . 006 ) 1.02 0.10 (0.04 0.004) 1.40 (0.055) max. a 0.31 (0.012) rad. rad. a = 3
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